Memory Retention Charateristics of MFMIS Structure Using SBT and Al 2 O 3 Buffer Layer
| Autor: | Hiroshi Ishiwara, Seung-Kuk Kang |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Random access memory
Hardware_MEMORYSTRUCTURES Materials science Diffusion barrier business.industry Memory retention Condensed Matter Physics Ferroelectricity Buffer (optical fiber) Electronic Optical and Magnetic Materials Hardware_GENERAL Ferroelectric RAM Optoelectronics Data retention Thin film business |
| Zdroj: | Ferroelectrics. 273:101-106 |
| ISSN: | 1563-5112 0015-0193 |
| DOI: | 10.1080/713716352 |
| Popis: | For FeRAM (Ferroelectric Random Access Memory) applications, good data retention characteristics and superior reliability will be greatly required. In order to fabricate MFMIS (Metal-Ferroelectrics... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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