304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode

Autor:	Martin H. Hu, Yabo Li, Hong Ky Nguyen, Chung-En Zah, Nick Visovsky, Kechang Song, Sean Coleman
Rok vydání:	2008
Předmět:	Materials science Laser diode business.industry Lithium niobate Physics::Optics Second-harmonic generation Nonlinear optics Laser law.invention Semiconductor laser theory chemistry.chemical_compound Optics Distributed Bragg reflector laser chemistry law Optoelectronics business Diode
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.770678
Popis:	We report for the first time, to the best of our knowledge, 304 mW green light emission generated by frequency doubling of the output from a 1060-nm DBR semiconductor laser using a periodically poled MgO-doped lithium niobate waveguide in a compact single-pass configuration. The excellent performance of these DBR lasers, including a kink-free power greater than 750 mW, single-spatial-mode output beam, single-wavelength emission spectra, and high wavelength-tuning efficiency, plays an important role in the generation of high-power green light.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a2be74256bee06d4f64a8f88539f6b21 https://doi.org/10.1117/12.770678 Zobrazit plný text záznamu