Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

Autor:	David B. Mitzi, Richard Haight, Oki Gunawan, Ravin Mankad, Lauren Hartle, Helen Hejin Park, Roy G. Gordon, Rachel Lenox Heasley, Ashwin Jayaraman, Chuanxi Yang
Rok vydání:	2014
Předmět:	Atomic layer deposition Materials science Physics and Astronomy (miscellaneous) chemistry Aluminium Inorganic chemistry Wide-bandgap semiconductor chemistry.chemical_element Orders of magnitude (speed) Zinc Photovoltaic effect Thin film Order of magnitude
Zdroj:	Applied Physics Letters. 105:202101
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.4901899
Popis:	Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 1019 to 1020 cm−3 with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 1019 to 1014 cm−3 for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) > 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications.
Databáze:	OpenAIRE
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