Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method
| Autor: | Hiroshi Amano, Tetsuya Takeuchi, Isamu Akasaki, Satoshi Kamiyama, Daisuke Iida, Yasuhiro Isobe, Mamoru Imade, Tatsuyuki Sakakibara, Motoaki Iwaya, Yusuke Mori, Yasuo Kitaoka |
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| Rok vydání: | 2011 |
| Předmět: |
Flux method
Materials science business.industry Heterojunction Gallium nitride Surfaces and Interfaces Substrate (electronics) Condensed Matter Physics Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Optics chemistry law Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Scanning tunneling microscope business Vicinal |
| Zdroj: | physica status solidi (a). 208:1191-1194 |
| ISSN: | 1862-6300 |
| DOI: | 10.1002/pssa.201001019 |
| Popis: | We fabricated and characterized AlGaN/GaN heterostructure growth by MOVPE on vicinal m-plane free-standing GaN substrates prepared by the Na flux method. The miscut angle in the LPE-GaN substrate has a great influence on the surface morphology and crystalline quality of epitaxial GaN and AlGaN films. In particular, AlGaN/GaN on a 4° miscut-angle LPE-GaN substrate shows large step bunching, small-miscut-angle LPE GaN substrate is essential for fabricating on FET structure with a flat surface. |
| Databáze: | OpenAIRE |
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