| Autor: |
Aleksey E. Bolotnikov, V. Kopach, O. Kopach, Ralph B. James, P. M. Fochuk, A. Kanak, L. P. Shcherbak |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI. |
| DOI: |
10.1117/12.2529066 |
| Popis: |
High temperature Hall-effect investigations were used to study the change of the concentration and mobility of charge-carriers in Cd0.85Mn0.10Zn0.05Te and Cd0.85Mn0.10Zn0.05Te: In crystals grown by the vertical Bridgman technique. The Cd0.85Mn0.10Zn0.05Te and Cd0.85Mn0.10Zn0.05Te: In samples are characterized by optical and electrical measurements, and by IR-microscopy. We determined that the value of band gap increase with the Mn and Zn amount increasing in the Cd1-x-yMnxZnyTe crystals. We also show that after the high-temperature Hall-effect measurements performed under Cd overpressure the both crystals resistivity increase from 104 Ohm×cm to 106 Ohm×cm, and amount and size of Te inclusions decrease. According to the results of the high temperature Hall-effect investigations the temperatures and Cd vapor pressures intervals were established in which Indium plays major role and controls the concentration of charge carriers. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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