FinFET prototypes fabricated by aluminium hard mask FIB milling for fin definition and SiON/TiN/Al gate stack
| Autor: | Marcos Vinicius Puydinger dos Santos, Lucas P. B. Lima, Leandro Tiago Manera, José Alexandre Diniz, Alessandra Leonhardt, Frederico H. Cioldin |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Transconductance Gate stack chemistry.chemical_element Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Subthreshold slope Focused ion beam Fin (extended surface) chemistry Aluminium 0103 physical sciences Optoelectronics 0210 nano-technology business Tin Hard mask |
| Zdroj: | 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro). |
| DOI: | 10.1109/sbmicro.2016.7731324 |
| Popis: | FinFET prototypes have been fabricated using an aluminium hard mask FIB milling technique for fin definition and SiON/TiN/Al gate stack. A three dimensional fin with sub-100nm dimensions was obtained. Electrical characterisation results are presented and discussed. Maximum transconductance in the linear region of 500nS, leakage current of 10pA and subthreshold slope of 120mV/dec have been obtained at zero bulk bias, showing improvements on previous reported results for devices fabricated using the focused ion beam. Process modifications are suggested to obtain further improvements in electrical response. |
| Databáze: | OpenAIRE |
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