Effect of the state of the silicon surface on hydrogen sensitivity of Pd/n-Si barrier structures
| Autor: | T. A. Davydova, V. I. Balyuba, L. S. Khludkova, V. M. Kalygina |
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| Rok vydání: | 2002 |
| Předmět: |
inorganic chemicals
Materials science Silicon Hydrogen Annealing (metallurgy) technology industry and agriculture Oxide Analytical chemistry Response time chemistry.chemical_element Thermal treatment equipment and supplies Condensed Matter Physics complex mixtures Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials stomatognathic diseases Crystallography chemistry.chemical_compound chemistry Palladium |
| Zdroj: | Semiconductors. 36:1136-1137 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | The influence exerted by the thermal annealing of silicon, prior to the deposition of a palladium contact, on the hydrogen sensitivity of palladium-〈natural oxide〉-silicon structures was studied. It is shown that structures based on annealed silicon have a much higher sensitivity to hydrogen and a shorter response time when compared with structures based on silicon not subjected to annealing. The results obtained are discussed in terms of structural transformations occurring at the silicon-〈natural oxide〉 interface during thermal treatment. |
| Databáze: | OpenAIRE |
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