Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium–Zinc-Oxide Thin-Film Transistors
| Autor: | Mardhiah Muhamad Sabri, Si Joon Kim, Chul Ho Kim, Hyun Jae Kim, Joohye Jung, Jae Won Na, Tae Soo Jung |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) Doping Oxide chemistry.chemical_element Germanium Zinc Electronic Optical and Magnetic Materials Active layer chemistry.chemical_compound chemistry Thin-film transistor Electronic engineering Optoelectronics Electrical and Electronic Engineering Thin film business |
| Zdroj: | IEEE Transactions on Electron Devices. 62:2888-2893 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2015.2455558 |
| Popis: | Germanium (Ge) doping effects on solution-processed indium–zinc-oxide (IZO) thin-film transistors (TFTs) were investigated. Ge doping increased the carrier concentration of Ge-doped IZO (Ge:IZO) thin films from $3.32 \times 10^{14}$ to $3.13 \times 10^{15}$ cm3 by Ge substitution for zinc (Zn). Ge easily substituted for Zn in the IZO active layer, due to its comparably small atomic radius. By this substitution, Ge doping provided additional valence electrons to the active layer, resulting in a value for the field-effect mobility of a Ge:IZO TFT that was almost two times greater than that of a pristine IZO TFT. Consequently, despite the Ge:IZO TFT being a quaternary system, it displayed a better electrical performance and stability at low processing temperatures, thus demonstrating the feasibility of this device for flexible displays. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|