In situelectronic probing of semiconducting nanowires in an electron microscope
| Autor: | D L Dheeraj, A. M. Munshi, Bjørn-Ove Fimland, M.B. Erlbeck, Helge Weman, A. T. J. van Helvoort, Junghwan Huh, Vidar Tonaas Fauske, Dong Chul Kim |
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| Rok vydání: | 2015 |
| Předmět: |
010302 applied physics
In situ Histology Materials science Scanning electron microscope Nanowire Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Pathology and Forensic Medicine law.invention law 0103 physical sciences Deposition (phase transition) Electron beam-induced deposition Electron microscope 0210 nano-technology Science technology and society Nanoscopic scale |
| Zdroj: | Journal of Microscopy. 262:183-188 |
| ISSN: | 0022-2720 |
| DOI: | 10.1111/jmi.12328 |
| Popis: | For the development of electronic nanoscale structures, feedback on its electronic properties is crucial, but challenging. Here, we present a comparison of various in situ methods for electronically probing single, p-doped GaAs nanowires inside a scanning electron microscope. The methods used include (i) directly probing individual as-grown nanowires with a sharp nano-manipulator, (ii) contacting dispersed nanowires with two metal contacts and (iii) contacting dispersed nanowires with four metal contacts. For the last two cases, we compare the results obtained using conventional ex situ litho-graphy contacting techniques and by in situ, direct-write electron beam induced deposition of a metal (Pt). The comparison shows that 2-probe measurements gives consistent results also with contacts made by electron beam induced deposition, but that for 4-probe, stray deposition can be a problem for shorter nanowires. This comparative study demonstrates that the preferred in situ method depends on the required throughput and reliability. |
| Databáze: | OpenAIRE |
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