DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors
| Autor: | Sheng-Yu Wang, Wen-Hao Chang, Jen-Inn Chyi, Chao-Min Chang, Pei-Yi Chiang, Shu-Han Chen |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Bipolar junction transistor Direct current Heterojunction Carrier lifetime Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound chemistry Indium phosphide Optoelectronics Electrical and Electronic Engineering business Indium gallium arsenide Molecular beam epitaxy |
| Zdroj: | IEEE Transactions on Electron Devices. 57:3327-3332 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | DC electrical characteristics of a series of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors (DHBTs) that are grown on InP by molecular beam epitaxy are reported and analyzed. The InGaAsSb base of the transistors leads to a type-I base-emitter junction and a type-II base-collector junction, resulting in unique device characteristics, such as low turn-on voltage, low crossover current, and constant current gain over a wide current range. In addition, the DHBTs exhibit rather high current gains despite the use of a heavily doped thick InGaAsSb base layer. This indicates the long minority carrier lifetime of the InGaAsSb material. A high current gain over base sheet resistance ratio is, thus, realized with these novel DHBTs. |
| Databáze: | OpenAIRE |
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