Electron probe microanalysis of HgCdTe heteroepitaxial structures with CdTe buffer layers

Autor:	A. N. Polyakov, A. A. Mukhanova, S. A. Dvoretskii, Yu. N. Dolganin, N. N. Mikheev, M. A. Stepovich, N. N. Mikhailov, V. V. Karpov
Rok vydání:	2011
Předmět:	Semiconductor Electron probe microanalysis Materials science Infrared business.industry Optoelectronics Photodetector Thin film business Buffer (optical fiber) Cadmium telluride photovoltaics Surfaces Coatings and Films
Zdroj:	Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 5:934-940
ISSN:	1819-7094 1027-4510
DOI:	10.1134/s1027451011100077
Popis:	Some results of electron probe microanalysis of HgCdTe heteroepitaxial structures with wide-gap semiconductor CdTe buffer layers are described. It is shown that these structures may be used for manufacturing high-performance photodetectors for registration of infrared radiation in the ranges of 3–5 and 8–12 μm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a267b6888efab6de434bd63ac76ab58f https://doi.org/10.1134/s1027451011100077 Zobrazit plný text záznamu Full text from SpringerLink