Investigation of connecting techniques for high temperature application on power modules
| Autor: | Hiroshi Nishikawa, Yoshiki Endo, Fumiyoshi Kawashiro, Tatsuo Tonedachi |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science 020208 electrical & electronic engineering Electronic packaging 02 engineering and technology 01 natural sciences Durability Engineering physics chemistry.chemical_compound Cable gland Reliability (semiconductor) chemistry Power module 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Silicon carbide Electronic engineering Power semiconductor device Junction temperature |
| Zdroj: | 2016 International Conference on Electronics Packaging (ICEP). |
| DOI: | 10.1109/icep.2016.7486851 |
| Popis: | Recently, there have been many developments on power devices to improve their functions. Especially, the junction temperature of power modules that equip SiC (Silicon Carbide) chips will be higher than 200 °C as current densities are too high, and new electronic packaging technologies shall be developed to meet higher temperature and higher power cycle durability requirements. In order to meet these requirements, in the present study, we propose Cu wire, Cu ribbon and Cu connector between Cu wirings of the substrates and investigate their feasibilities, including electrical resistances, footprints of bonding area, and bonding reliability under accelerated stress test, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|