Independent Measurement of SET Pulse Widths From N-Hits and P-Hits in 65-nm CMOS
Autor: | Lloyd W. Massengill, Jugantor Chetia, Matthew J. Gadlage, Balaji Narasimham, Bharat L. Bhuva, S. Jagannathan, Ronald D. Schrimpf, J. R. Ahlbin |
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Rok vydání: | 2010 |
Předmět: |
Physics
Nuclear and High Energy Physics business.industry Circuit design Electrical engineering Pulse (physics) Optics Soft error Nuclear Energy and Engineering CMOS Nuclear electronics Transient (oscillation) Electrical and Electronic Engineering Network synthesis filters business Pulse-width modulation |
Zdroj: | IEEE Transactions on Nuclear Science. |
ISSN: | 0018-9499 |
Popis: | A novel circuit design for separating single-event transients due to N-hits and P-hits is described. Measurement results obtained from a 65 nm technology using heavy-ions show different dominant mechanisms for charge collection for P-hits and N-hits. The data collected represent the first such separation of SET pulse widths for 65 nm bulk CMOS technology. For low LET particles, N-hit transients are longer, but for high LET particles, P-hit transients are longer. N-well depth and the parasitic bipolar effect are shown to be the most important parameters affecting transient pulse widths. |
Databáze: | OpenAIRE |
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