Independent Measurement of SET Pulse Widths From N-Hits and P-Hits in 65-nm CMOS

Autor: Lloyd W. Massengill, Jugantor Chetia, Matthew J. Gadlage, Balaji Narasimham, Bharat L. Bhuva, S. Jagannathan, Ronald D. Schrimpf, J. R. Ahlbin
Rok vydání: 2010
Předmět:
Zdroj: IEEE Transactions on Nuclear Science.
ISSN: 0018-9499
Popis: A novel circuit design for separating single-event transients due to N-hits and P-hits is described. Measurement results obtained from a 65 nm technology using heavy-ions show different dominant mechanisms for charge collection for P-hits and N-hits. The data collected represent the first such separation of SET pulse widths for 65 nm bulk CMOS technology. For low LET particles, N-hit transients are longer, but for high LET particles, P-hit transients are longer. N-well depth and the parasitic bipolar effect are shown to be the most important parameters affecting transient pulse widths.
Databáze: OpenAIRE