| Autor: |
Robert Chivas, Michael DiBattista, Scott Silverman |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
International Symposium for Testing and Failure Analysis. |
| ISSN: |
0890-1740 |
| DOI: |
10.31399/asm.cp.istfa2015p0460 |
| Popis: |
Anticipating the end of life for IR-based failure analysis techniques, a method of global backside preparation to ultra-thin remaining silicon thickness (RST) has been developed. Ultra-thin RST enables VIS light techniques such as laser voltage probing. In this work we investigate the lower RST limit due to sub-surface damage from grinding and a one-step polishing method to achieve 3 um RST (+/- 0.8 um) over 121 mm2 die (11 x 11 mm) test package as well as 5 um (+/- ) over 109.2 mm2 (8.0 x 13.7mm) active device. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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