Autor: |
Jean Giess, Alan J. Hydes, S. J. Smith, David J. Hall, Janet E. Hails, James W. Edwards, Neil Gordon, David J. Lees, Andrew Graham, M. K. Haigh |
Rok vydání: |
2008 |
Předmět: |
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Zdroj: |
SPIE Proceedings. |
ISSN: |
0277-786X |
DOI: |
10.1117/12.786617 |
Popis: |
We have previously discussed the potential of using a Hg1-xCdxTe source as a reference plane for the non-uniformity correction of thermal imagers and which is being developed as an option for the UK 3 rd generation, high performance thermal imaging program (Albion). In this paper we will present our first results on a large area (1.5 cm x 1.5 cm) source which was grown on a silicon substrate and can simulate a range of temperatures from -10 o C to +30 o C. Due to the fast switching speed, the apparent temperature can be changed on a frame by frame basis. Also, the operation of the device can be synchronized to the integration time of the camera to reduce the mean power requirements by a factor of 10 and reduce thermal heating effects. The main applications for Hg1-xCdxTe devices as high-performance, cryogenically-cooled detectors typically require very low drive currents. The use of this material for large-area LEDs has generated new challenges to deal with the high peak currents. These are typically in the range 1-2 A/cm 2 for a MWIR waveband source and have led to a need to reduce the common impedance, reduce the contact resistances and consider the effects of current crowding. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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