| Autor: |
Yun Shi, Rainer Minixhofer, Rick Phelps, Martin Knaipp, Max G. Levy, Natalie B. Feilchenfeld |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs. |
| DOI: |
10.1109/ispsd.2011.5890829 |
| Popis: |
In this paper, we discuss the scalable NLDMOS design in a 0.18μm HV-CMOS technology. The design impacts in quasi-saturation are compared between the 25V and 50V NLDMOS to demonstrate the implications in output and f T characteristics. The STI depth sensitivity in DC, ac and HCI characteristics is investigated. The results prove a very robust design, featuring dlin shift over 10 year lifetime for +/−10% STI depth variations. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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