Analysis of SiGe/Si quantum dot superlattices grown by low-pressure chemical vapor deposition for thin solar cells
| Autor: | Geza Dezsi, Rama Venkatasubramanian, Minjoo Larry Lee |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Photocurrent
business.industry Chemistry Superlattice Metals and Alloys Analytical chemistry Surfaces and Interfaces Chemical vapor deposition Quantum dot solar cell Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Quantum dot Materials Chemistry Optoelectronics business Current density Molecular beam epitaxy |
| Zdroj: | Thin Solid Films. 518:S76-S79 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2009.10.060 |
| Popis: | We have grown SiGe/Si quantum dot superlattices (QDSLs) via low-pressure chemical vapor deposition (LPCVD) in order to analyze their performance as thin-film solar cells. Self-assembled SiGe quantum dots were included in the base region in order to increase absorption of near-infrared (NIR) photons and to increase short-circuit current density, J sc . Rather than physically separate the epitaxial layers from the substrate prior to testing, a unique cell design was used to ensure that the epitaxial layers dominate the photocurrent from the cells. We found that open-circuit voltage V oc in our LPCVD-grown cells was comparable to that in earlier-reported cells grown by molecular beam epitaxy (MBE). The effect of both superlattice thickness and quantum dot density were also explored, and dislocations were found to sharply reduce V oc for thick superlattices with sufficiently-high dot density. |
| Databáze: | OpenAIRE |
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