XPS characterization of tungsten-based contact layers on 4H–SiC
| Autor: | C. Brylinski, Ts. Marinova, C. Arnodo, Anelia Kakanakova-Georgieva, O. Noblanc, S. Cassette |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Inert
Materials science Annealing (metallurgy) Metals and Alloys Analytical chemistry Schottky diode chemistry.chemical_element Surfaces and Interfaces Tungsten Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Transition metal Tungsten carbide Silicide Materials Chemistry |
| Zdroj: | Thin Solid Films. 337:180-183 |
| ISSN: | 0040-6090 |
| Popis: | Annealed W (WN)/4H–SiC interfaces have been compared on the basis of X-ray photoelectron spectroscopy (XPS) studies. The 1200°C annealed W (WN)/4H–SiC structures are characterized by intense interface reactions leading to tungsten carbide and tungsten silicide formation in the contact layers. The 800°C annealed WN/4H–SiC structure exhibits a chemically inert interface, and the 800°C annealed WN/4H–SiC contact is found to be of a Schottky type with a barrier height of 0.94 eV and an ideality coefficient of 1.09. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect