Multistate resistance switching in Bi/PMN–PT(111) heterostructures by electric and magnetic field
| Autor: | Hui Wang, Jian-Min Yan, Meng Xu, Lei Guo, Zhi-Xue Xu, Ren-Kui Zheng, Guanyin Gao |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Resistive touchscreen Materials science Strain (chemistry) business.industry Heterojunction Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Magnetic field Pulsed laser deposition Electric field 0103 physical sciences Optoelectronics Electrical and Electronic Engineering Thin film business |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 31:3585-3589 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-020-02908-8 |
| Popis: | Bi thin films were grown on (111)-oriented 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT) single-crystal substrates by pulsed laser deposition. Resistance of Bi/PMN–PT could be modulated by asymmetrical bipolar electric field in a reversible and nonvolatile manner at 300 K. By tuning asymmetrical bipolar electric field, different nonvolatile strain states could be generated in PMN–PT and transferred to Bi thin film, which leads to different nonvolatile resistance states. Furthermore, different resistance states of the Bi films could be achieved under different magnetic field at 300 K. The ferroelastic strain- and magnetic-field-modulated resistive properties in Bi/PMN–PT suggest a promising approach for multistate resistive memories. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink