Heteroepitaxy of InSe/GaSe on Si(111) Substrates

Autor:	Chung-Ching Yang, Krzysztof Nauka, Jacek B. Jasinski, Gary Gibson, Alison Chaiken, Zuzanna Liliental-Weber, R. Bicknell
Rok vydání:	2003
Předmět:	Crystallography Materials science chemistry Phase (matter) Stacking chemistry.chemical_element Heterojunction Trigonal crystal system Crystal twinning Layer (electronics) Indium Layered structure
Zdroj:	MRS Proceedings. 803
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-803-gg4.5
Popis:	High quality growth of InSe on Si(111) was achieved by insertion of GaSe buffer layer. Rhombohedral polytypes were formed in both the InSe and GaSe layers. Twinning and stacking disorder was often detected in these materials due to their layered structure. Moreover, in samples with a thin GaSe layer, strong interdiffusion of indium into the GaSe layer was detected that resulted in the formation of an InxGaySe phase. The dominant threading defects present in these InSe/GaSe heterostructures were screw dislocations, which may act as nonradiative recombination centers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a23b0b7339ce4c021dd7458738966b84 https://doi.org/10.1557/proc-803-gg4.5 Zobrazit plný text záznamu Full text from SpringerLink