Very Low Dark Current CCD Image Sensor

Autor:	Inge M. Peters, E.W. Bogaart, J.T. Bosiers, A.C. Kleimann, W. Hoekstra
Rok vydání:	2009
Předmět:	Surface diffusion Physics Pixel business.industry Phase (waves) Electronic Optical and Magnetic Materials Optics Charge-coupled device Current sensor Electrical and Electronic Engineering Diffusion (business) Image sensor business Dark current
Zdroj:	IEEE Transactions on Electron Devices. 56:2462-2467
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2009.2030642
Popis:	Very low dark current in charge-coupled-device image sensors is established by means of multipinned phase combined with vertical antiblooming, so-called all-gates pinning. Hereby, dark-current generation at the surface and diffusion from the bulk are suppressed. Using a conventional 6 times 6 mum2 image pixel with an additional n-type implant, a dark-current level of 1.5 pA/cm2 is obtained at 60degC without loss of optical performance. This means that the pixel dark current is reduced by a factor 80.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a22c98644647701980f0242d5998f29b https://doi.org/10.1109/ted.2009.2030642 Zobrazit plný text záznamu