Stacked CMOS SRAM cell
| Autor: | H.W. Lam, Satwinder Malhi, R.F. Pinizzotto, C.-E. Chen |
|---|---|
| Rok vydání: | 1983 |
| Předmět: |
Very-large-scale integration
Signal generator Materials science business.industry Amplifier Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Laser Electronic Optical and Magnetic Materials Threshold voltage law.invention CMOS Memory cell law Hardware_INTEGRATEDCIRCUITS Static random-access memory Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 4:272-274 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/edl.1983.25730 |
| Popis: | A static random access memory (SRAM) cell with cross-coupled stacked CMOS inverters is demonstrated for the first time. In this approach, CMOS inverters are fabricated with a laser recrystallized p-channel device stacked on top of and sharing the gate with a bulk n-channel device using a modified two-polysilicon n-MOS process. The memory cell has been exercised through the write and read cycles with external signal generators while the output is buffered by an on-chip, stacked-CMOS-inverter-based amplifier. |
| Databáze: | OpenAIRE |
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