Improvement of Poly-Pimple-Induced Device Mismatch on 6T-SRAM at 65-nm CMOS Technology
| Autor: | Chan-Yuan Hu, Shoou-Jinn Chang, Jone F. Chen, Kay-Ming Lee, Chih-Ping Lee, S. C. Chen |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Transistor Scan chain Integrated circuit Electronic Optical and Magnetic Materials law.invention Non-volatile memory Pimple CMOS law Etching (microfabrication) Electronic engineering medicine Optoelectronics Static random-access memory Electrical and Electronic Engineering medicine.symptom business |
| Zdroj: | IEEE Transactions on Electron Devices. 57:956-959 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2010.2041285 |
| Popis: | An incremental poly etching method can improve the poly pimple defect-induced device mismatch on the static noise margin (SNM) of 65-nm-node low-power 6T-SRAM. The improvement on circuit level is examined by the yield of scan chain and memory built-in self-test (MBIST), which is known to correlate well to process-induced defects. |
| Databáze: | OpenAIRE |
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