Comparison of radiation hardening techniques for standard CMOS technologies

Autor:	Mona S. Salem, Marwa S. Salem, Somaya I. Kayed, Hani F. Ragai
Rok vydání:	2003
Předmět:	Electron mobility FO4 Materials science business.industry Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Threshold voltage CMOS MOSFET Hardware_INTEGRATEDCIRCUITS Optoelectronics Inverter business Radiation hardening Hardware_LOGICDESIGN Electronic circuit
Zdroj:	Proceedings of the Twentieth National Radio Science Conference (NRSC'2003) (IEEE Cat. No.03EX665).
Popis:	This paper is mainly concerned with the comparison of two well-known hardness techniques on the circuit level rather than on the technology level (low-cost standard CMOS technology is assumed). The inverter has been taken as a case study. The implementation technology is CMOS 0.6/spl mu/ from AMS.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a21a94967da6df7fa1d58616387ec393 https://doi.org/10.1109/nrsc.2003.157355 Zobrazit plný text záznamu