Electron Effective Mass and g Factor in Wide HgTe Quantum Wells
| Autor: | S. M. Podgornykh, E. V. Ilchenko, G. I. Harus, A. S. Bogolubskii, S. V. Gudina, Sergey A. Dvoretsky, V. N. Neverov, N. G. Shelushinina, Nikolay N. Mikhailov, M. V. Yakunin |
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| Rok vydání: | 2018 |
| Předmět: |
Physics
Magnetoresistance Condensed matter physics g factor 02 engineering and technology Landau quantization Electron Quantum Hall effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Effective mass (solid-state physics) 0103 physical sciences 010306 general physics 0210 nano-technology Quantum well |
| Zdroj: | Semiconductors. 52:12-18 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782618010098 |
| Popis: | The magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors ν = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the g factor (≅ 80) are obtained. |
| Databáze: | OpenAIRE |
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