On the homogeneity of sputter-deposited ITO films Part I. Stress and microstructure
| Autor: | W. Walrave, Teunis J. Vink, J. E. A. M. van den Meerakker, P. C. Baarslag, J.L.C. Daams |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
Annealing (metallurgy) Metals and Alloys Mineralogy Surfaces and Interfaces Sputter deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials Electron diffraction Sputtering Transmission electron microscopy Physical vapor deposition Materials Chemistry Crystallite Thin film Composite material |
| Zdroj: | Thin Solid Films. 266:145-151 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(95)06818-x |
| Popis: | Tin-doped indium oxide films deposited by d.c. magnetron sputtering were characterized by electrical resistivity, optical transmission, X-ray diffraction (XRD), transmission electron microscopy and stress measurements. Deposition was performed at low temperature and 520 K in different oxygen ambients. The influence of post-deposition annealing was investigated. Special attention was paid to the homogeneity throughout the film thickness with respect to microcrystallinity and stress. It turned out that the low-temperature films consisted of an amorphous phase adjacent to the glass substrate with a severely stressed polycrystalline layer on top. After annealing, the amorphous phase was crystallized and stress free. This anomaly in stress-depth dependence was also reflected in doublet-type peak profiles observed in XRD diagrams. The high-temperature films were homogeneously polycrystalline after deposition and contained high compressive stresses when the oxygen partial pressure during deposition was not too low. |
| Databáze: | OpenAIRE |
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