Effect of vacuum metalized gate electrode in top-gate solid-state electrolyte-gated organic transistors
| Autor: | Yong-Young Noh, Benjamin Nketia-Yawson, Yong Xu, Grace Dansoa Tabi |
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| Rok vydání: | 2018 |
| Předmět: |
Electron mobility
Materials science chemistry.chemical_element 02 engineering and technology Dielectric Electrolyte 010402 general chemistry 01 natural sciences law.invention Biomaterials law Materials Chemistry Electrical and Electronic Engineering business.industry Transistor Contact resistance General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Copper 0104 chemical sciences Electronic Optical and Magnetic Materials Semiconductor chemistry Electrode Optoelectronics 0210 nano-technology business |
| Zdroj: | Organic Electronics. 55:63-68 |
| ISSN: | 1566-1199 |
| Popis: | We report the effect of the metal-gate electrode in top-gate solid-state electrolyte-gated transistors (SEGTs). Here, a P(VDF-TrFE):P(VDF-HFP)-[EMIM][TFSI] dielectric blend is used as the solid-state electrolyte gate insulator (SEGI), with a variety of metal-gate electrodes, such as gold (Au), nickel (Ni), silver (Ag), and copper (Cu), and poly(3-hexylthiophene-2,5-diyl) (P3HT) as a semiconductor. Among the employed metal-gate electrodes, we achieved highest hole mobility of 3.26 ± 0.67 cm2V−1s−1 in Au-gated P3HT SEGTs, which is ten times greater than the other metal-gated devices. The remarkable mobility in Au-gated devices is attributed to low contact resistance (Rc |
| Databáze: | OpenAIRE |
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