RF-performance of thick damascene Cu interconnect on silicon

Autor:	R.J. Havens, C. Detcheverry, Pascal Bancken, Roel Daamen, V.H. Nguyen, Greja Johanna Adriana Maria Verheijden, W.D. van Noort, Andreas Bernardus Maria Jansman
Rok vydání:	2004
Předmět:	Materials science Silicon Equivalent series resistance business.industry Coplanar waveguide Copper interconnect Electrical engineering chemistry.chemical_element Substrate (electronics) Laser linewidth chemistry Electrical resistivity and conductivity Optoelectronics Wafer business
Zdroj:	2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).
Popis:	The performance of 2 /spl mu/m thick damascene Cu lines embedded in low K material are evaluated. The process is well control over a 200 mm wafer, provided that tiling is used. A minimum linewidth of 560 nm is achieved. The RF performance of substrate and metal lines in the 1 - 100 GHz frequency range is investigated with coplanar waveguides. Various substrates were used with resistivities ranging from 3-5 /spl Omega/-cm to 4-5k/spl Omega/-cm. With a properly treated substrate, RF losses are only determined by AC series resistance of the metal lines yielding very low losses of 1.7 dB/cm at 10 GHz.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a1fa03762a29106450a8b310f8d6cbf3 https://doi.org/10.1109/mwsym.2004.1338899 Zobrazit plný text záznamu