Extraction of Sheet Resistance and Line Width From All-Copper ECD Test Structures Fabricated From Silicon Preforms
| Autor: | A.J. Snell, Andrew Bunting, A.W.S. Ross, Stewart Smith, A.M. Gundlach, M.W. Cresswell, A.J. Walton, R.A. Allen, B.J.R. Shulver, L.I. Haworth, J.T.M. Stevenson |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element Integrated circuit Condensed Matter Physics Copper Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials law.invention chemistry law Nondestructive testing Electronic engineering Optoelectronics Electrical measurements Electrical and Electronic Engineering business Critical dimension Electrical conductor Sheet resistance |
| Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 21:495-503 |
| ISSN: | 1558-2345 0894-6507 |
| Popis: | Test structures have been fabricated to allow electrical critical dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in integrated circuit (IC) interconnect systems. The implementation of these structures is such that no conductive barrier metal has been used. The advantage of this approach is that the electrical measurements provide a nondestructive and efficient method for determining critical dimension (CD) values and for enabling fundamental studies of electron transport in narrow copper features unaffected by the complications of barrier metal films. This paper reports on the results of tests which have been conducted to evaluate various extraction methods for sheet resistance and line width values from the current design. |
| Databáze: | OpenAIRE |
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