| Popis: |
Aluminum doped zinc oxide thin films were synthesized by the chemical vapor deposition (CVD) on the glass substrate. The optical and structural properties of these films as a function of Al content (0,1,5,10 wt.%) were investigated. The average transmittance of all films is higher than 80% at a wide wavelength of 300-800nm. The bandgap energy, calculated for all samples with different Al dopant concentration, is around 3. 35-3.56eV. X-ray diffraction results reveal that A1/ZnO films have a hexagonal wurtzite structure with (002) preferred orientation. Top and cross-sectional scanning electron microscopy (SEM) micrographs of the prepared ZnO samples exhibit the crystalline growth structures by increasing Al concentration. Doping the ZnO with A$1^{3+}$ influences the volume composition of ZnO:A1 thin films, causes an increase in the surface roughness with an increase in the Al and O content, and a decrease in the average Zn concentration. |
