A comprehensive study of beryllium diffusion in InGaAs using different forms of kick-out mechanism
| Autor: | S. Koumetz, K. Ketata, J. Marcon, Mohamed Ketata, Jean-Guy Caputo |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Annealing (metallurgy)
Analytical chemistry Finite difference method chemistry.chemical_element Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Secondary ion mass spectrometry chemistry Electric field Physical chemistry Effective diffusion coefficient Beryllium Thin film Instrumentation |
| Zdroj: | The European Physical Journal Applied Physics. 8:7-18 |
| ISSN: | 1286-0050 1286-0042 |
| DOI: | 10.1051/epjap:1999223 |
| Popis: | Be diffusion during post-growth annealing has been investigated in InGaAs epitaxial layers. Kick-out mechanisms considering species charges, built-in electric field and Fermi-level effect have been studied. Several forms of kick-out mechanism have been implemented in our simulation programs. Experimental concentration profiles obtained by SIMS analysis have been compared systematically with the numerical results of simulations. We have deduced that the kick-out mechanism Bei 0 ↔ Bes − + IIII + is the dominating diffusion mechanism in InGaAs under our experimental conditions (C 0 = 3 × 19 cm−3). With our experimental data, we have found that the effective diffusion coefficient values are D = (7.7−9) × 10−13 cm2 s−1 at T = 700 °C and D = (1.4−1.5) × 10−11 cm2 s−1 at T = 800 °C which is several orders of magnitude higher than most published data. A possible explanation would be the effect of V/III flux ratio. |
| Databáze: | OpenAIRE |
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