Ultraviolet photodetector on the basis of heterojunction with textured interface
| Autor: | N. L. Dmitruk, I.B. Mamontova, O. Yu. Borkovskaya, O.I. Mayeva |
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| Rok vydání: | 1999 |
| Předmět: |
Fabrication
Materials science Passivation business.industry Metals and Alloys Photodetector Heterojunction Condensed Matter Physics medicine.disease_cause Surfaces Coatings and Films Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound Optics Semiconductor chemistry medicine Indium phosphide Optoelectronics Electrical and Electronic Engineering business Instrumentation Ultraviolet |
| Zdroj: | Sensors and Actuators A: Physical. 75:151-155 |
| ISSN: | 0924-4247 |
| Popis: | This paper is devoted to elaboration and investigation of ultraviolet photodetector (UVPD) on the basis of heterojunctions of A 3 B 5 semiconductor/transparent conducting layer with microrelief interface. The methods of random microrelief of desirable morphology fabrication for (100) GaAs and InP surfaces are described. AFM images of GaAs and InP surfaces with optimal microrelief are presented as well. The spectral responses of Au/(GaAs, InP) and ITO/GaAs photodetectors in the spectral range from 0.25 to 0.5 μm in dependence on the interface microrelief morphology and passivating treatments have been investigated. Photodetectors with enhanced UV response at λ =0.26–0.40 μm have been obtained on the basis of Au/GaAs ( S λ =0.17–0.21 A/W) and Au/InP ( S λ =0.12–0.23 A/W) heterostructures by the developed technology of interface texturation and passivation. |
| Databáze: | OpenAIRE |
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