Millimeter-Wave SiGe HBT High Voltage/High Power Architecture Implementation
| Autor: | Mona Zaghloul, B. Huebschman, Ed Viveiros, H.A. Hung, Ali M. Darwish, Thomas J. Farmer |
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| Rok vydání: | 2011 |
| Předmět: |
Computer science
business.industry Heterojunction bipolar transistor Electrical engineering High voltage Condensed Matter Physics Silicon-germanium chemistry.chemical_compound Power Architecture chemistry Extremely high frequency Electronic engineering Radio frequency Electrical and Electronic Engineering Center frequency business Electrical impedance |
| Zdroj: | IEEE Microwave and Wireless Components Letters. 21:544-546 |
| ISSN: | 1558-1764 1531-1309 |
| DOI: | 10.1109/lmwc.2011.2164782 |
| Popis: | This letter discusses the first implementation of the high voltage/high power (HiVP) architecture in silicon at millimeter-wave frequencies. Implemented in a commercial 0.12 μm SiGe HBT BiCMOS process, PSAT = 19.0 dBm with a PAE of 11.47% in an area of 0.21 mm2, have been measured at center frequency 30 GHz. This architecture provides a new tool for silicon designers to achieve high output power, customizable bias, and a way to minimize, if not eliminate, matching circuitry at millimeter-wave frequencies. Simulation, layout, fabrication, and measurement results are presented in this letter. |
| Databáze: | OpenAIRE |
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