Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon
| Autor: | J.A. del Alamo, J.G. Fiorenza |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Power-added efficiency
Materials science Silicon business.industry RF power amplifier Transistor Electrical engineering Silicon on insulator chemistry.chemical_element Capacitance Electronic Optical and Magnetic Materials law.invention chemistry law Optoelectronics Breakdown voltage Electrical and Electronic Engineering Power MOSFET business |
| Zdroj: | IEEE Transactions on Electron Devices. 49:687-692 |
| ISSN: | 0018-9383 |
| Popis: | Simultaneously fabricated RF power LDMOSFETs on thin-film SOI and bulk silicon wafers. This work compares their DC current-voltage (I-V), capacitance-voltage (C-V), S-parameter, and 1.9-GHz load-pull characteristics and explains differences between them. The SOI LDMOSFET performance is shown to be largely similar to the performance of an equivalent bulk silicon LDMOSFET, but there are important differences. The SOI LDMOSFET has moderately lower on-state breakdown voltage due to increased body resistance. It also has significantly improved power-added efficiency due to reduced parasitic pad losses. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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