Fully integrated nonlinear modeling and characterization system of microwave transistors with on-wafer pulsed measurements

Autor:	Raymond Quéré, Jean-Pierre Teyssier, J.P. Viaud, J.J. Raoux
Rok vydání:	2002
Předmět:	Engineering business.industry Transistor Semiconductor device modeling law.invention Nonlinear system Automatic test equipment law Hardware_INTEGRATEDCIRCUITS Electronic engineering Scattering parameters Equivalent circuit Optoelectronics Wafer Radio frequency business
Zdroj:	Proceedings of 1995 IEEE MTT-S International Microwave Symposium.
DOI:	10.1109/mwsym.1995.406148
Popis:	A novel approach for nonlinear characterization and modeling of microwave transistors has been developed. The whole process is organized as a set of methods contained in the transistor database. This implies that characterization and modeling are performed in an integrated manner. I(V) and S-parameters are measured on wafer under pulsed conditions, suitable for MESFETs, HEMTs or HBTs as illustrated by the proposed models. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a1a153bd147a147642452e5f6b76b17b https://doi.org/10.1109/mwsym.1995.406148 Zobrazit plný text záznamu