Nanoparticle Formation in Si Implanted with Zinc and Oxygen Ions With Subsequent Annealing in Vacuum

Autor: Vladimir Privezentsev, A. Yu. Trofonov, V. I. Zinenko, O. S. Zilova, A. N. Tereshchenko, Dmitry A. Kiselev, V. S. Kulikauskas, T. S. Il’ina, A. N. Palagushkin, A. A. Burmistrov
Rok vydání: 2021
Předmět:
Zdroj: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 15:453-460
ISSN: 1819-7094
1027-4510
DOI: 10.1134/s1027451021030150
Popis: Nanoparticle formation in silicon subsequently doped with Zn and О ions and annealed in vacuum is presented in this paper. Standard n-type Si plates with the (100) orientation, a thickness of 380 nm, and a diameter of 76 mm and grown by the Czochralski method are implanted with 64Zn+ ions with a dose of 5 × 1016 cm–2 and an energy of 50 keV and with 16О+ ions with a dose of 2 × 1017 cm–2 and an energy of 20 keV. The ion current does not exceed 0.5 µA/cm2 during implantation so that plate overheating in comparison to room temperature does not exceed 50°С. Then the plates were cut into samples with dimensions of 10 × 10 mm and annealed at a temperature of 400 to 900°С with a step of 100°С in vacuum for 30 min. It is discovered that, after implantation, an amorphized layer with a thickness of approximately 150 nm is formed in Si; amorphous Zn and O nanoparticles with dimensions of about 5 nm are formed in it. Radiation-induced defects are annealed during heat treatment, and the amorphized-layer thickness decreases. After annealing, a peak at a wavelength of 370 nm forms at 700°С in the photoluminescence spectrum; it is caused by the formation of ZnO-phase nanoparticles. This peak vanishes after annealing at 900°С, and a peak at a wavelength of 425 nm appears in the photoluminescence spectrum; it is due to the appearance of the Zn2SiO4 phase.
Databáze: OpenAIRE
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