Boron and phosphorus diffusion in strained and relaxed Si and SiGe

Autor:	A. Nylandsted Larsen, J. Lundsgaard Hansen, Jacob Fage-Pedersen, N. Zangenberg
Rok vydání:	2003
Předmět:	Materials science Strain (chemistry) Silicon Phosphorus Analytical chemistry General Physics and Astronomy chemistry.chemical_element Crystallography chemistry Pairing Ultimate tensile strength Diffusion (business) Boron Molecular beam epitaxy
Zdroj:	Journal of Applied Physics. 94:3883-3890
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1602564
Popis:	The diffusion of boron and phosphorus has been investigated in SiGe grown by molecular beam epitaxy. The analysis was done in relaxed Si1−xGex for x=0, 0.01, 0.12, and 0.24 for B and x=0, 0.07, 0.12, 0.24, and 0.40 for P. B diffusion in relaxed samples shows little effect of changing the Ge content while for P diffusion, increasing Ge content increases the diffusion coefficient from Si up to Si0.76Ge0.24. This is explained by a pairing of B and Ge atoms retarding the diffusion. B diffusion in compressively strained Si0.88Ge0.12 and Si0.76Ge0.24 and tensile strained Si and Si0.88Ge0.12 was also investigated. Compressive strain was found to decrease the diffusion coefficient of B and tensile strain to increase it.
Databáze:	OpenAIRE
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