| Autor: |
L. Saravanan, I. Phebe Kokila, Helen Annal Therese, M. Manivel Raja, Sujeet Chaudhary |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
NATIONAL CONFERENCE ON PHYSICS AND CHEMISTRY OF MATERIALS: NCPCM2020. |
| ISSN: |
0094-243X |
| Popis: |
Ta [RT]/ CoFeB (2-50nm) [Ts = 500°C] /Ta [RT] films were grown on Silicon dioxide substrates by UHV magnetron sputtering system. The magnetic, microstructural and electrical properties were investigated as a function of CoFeB thickness (tCoFeB) at suitable substrate temperature (Ts). Further, we identify that, the strength of perpendicular coercivity (Hc┴)of the stacks mainly depends on the tCoFeB. Higher Hc┴ value of ≈ 564 Oe is observed for the thicker CoFeB film. The enhancement in the Hc┴ on increasing the film thickness upto 50 nm is due to the crystallization of CoFeB film at Ts = 500 °C. The morphological studies show larger grain size for thicker CoFeB film. A high value of electrical resistivity (ρ) is obtained by employing the standard four probe method, which further proves the amorphous nature of the CoFeB films. This Ta/CoFeB/Ta at Ts = 500 °C structures having high Hc┴ , large spin polarization (P) and low damping constant (α) values could be a capable candidate in the fabrication of novel spintronic devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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