Analytical Design of Millimeter-Wave 100-nm GaN-on-Si MMIC Switches Using FET-Based Resonators and Coupling Matrix Method
| Autor: | Quan Xue, Guangxu Shen, Wenquan Che, Feng Xu, Haoshen Zhu |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Radiation
Materials science business.industry Impedance matching High-electron-mobility transistor Condensed Matter Physics Optical switch Resonator Optoelectronics Insertion loss Field-effect transistor Electrical and Electronic Engineering business Monolithic microwave integrated circuit Electronic circuit |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 69:3307-3318 |
| ISSN: | 1557-9670 0018-9480 |
| DOI: | 10.1109/tmtt.2021.3081113 |
| Popis: | This article presents an analytical design for millimeter-wave monolithic microwave integrated circuit (MMIC) switches. First, the field-effect-transistor-based (FET-based) resonator is proposed, whose resonant frequency and bandwidth can be controlled flexibly. As a result, the design flexibility of MMIC switches can be highly improved by using FET-based resonators. Second, a fast and flexible impedance matching technique is presented for MMIC switches based on the coupling matrix method. By selecting appropriate coupling parameters, the MMIC switches can be easily designed without designing multistage impedance matching circuits. In this way, low insertion loss (IL) and compact chip size can be accordingly obtained. For design validation, two single-pole single-throw (SPST) switch prototypes are designed and fabricated by using two or four FET-based resonators, respectively. Implemented in 100-nm GaN-on-Silicon HEMT process, high input 1-dB compression point (IP1 dB) of over 30 dBm is realized. The return losses are better than 15 dB, the minimum IL is only 1.1 dB at 30 GHz, and the isolations are higher than 45 dB. The above features indicate the validation of the proposed design method for MMIC switches. |
| Databáze: | OpenAIRE |
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