Analysis and Control of Deep-Level Defects in Dilute Nitride Semiconductor GaInNAsSb
| Autor: | Yilun He, Naoya Miyashita, Yoshitaka Okada |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Deep level Annealing (metallurgy) business.industry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Admittance spectroscopy 0103 physical sciences Optoelectronics 0210 nano-technology Spectroscopy Nitride semiconductors business Molecular beam epitaxy |
| Zdroj: | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). |
| Popis: | Deep-level defects in as-grown and annealed dilute nitride semiconductor GaInNAsSb solar cells grown by molecular beam epitaxy were investigated by admittance spectroscopy measurement and compared to determine the mechanism of post-annealing effects on improving the collection of photo carriers. The annealing was confirmed to be effective to decrease nitrogen-related defects in the as-grown GaInNAsSb sample as well as the background carrier concentration. This effect is considered to be mainly responsible for the improved collection of photo carriers. In addition, we found an optimal annealing temperature that suppresses the formation of new defects, leading to a remarkable improvement of the photo carrier collection. |
| Databáze: | OpenAIRE |
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