Novel fabrication technique for dual-gate MOS transistors
| Autor: | B. Hoefflinger, R. P. Zingg |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Fabrication
Materials science Transistor Polishing Silicon on insulator Nanotechnology Substrate (electronics) Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry Trichlorosilane law Chemical-mechanical planarization Field-effect transistor Electrical and Electronic Engineering |
| Zdroj: | Microelectronic Engineering. 10:115-126 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(90)90004-d |
| Popis: | We present a fabrication sequence which yields controlling isolated gates both above and below a conductance-modulated silicon film. Selective lateral overgrowth is performed for the first time with trichlorosilane, circumventing contamination problems with aggressive hydrochloric gas. The overgrowth is restricted to device scale to allow contacts to the substrate from the top surface. A self-limiting planarization technique by chemo-mechanical polishing is described to thin overgrowths to 0.7 μm thickness with better than 10% uniformity. Devices of bulk quality were implemented both in the substrate and in the overgrowth to demonstrate the capabilities of this new processing technology. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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