Voltage polarity effects in GST-based phase change memory: Physical origins and implications

Autor:	Alvaro Padilla, R. S. Shenoy, P. M. Rice, Robert M. Shelby, Teya Topuria, Andrew J. Kellock, Kailash Gopalakrishnan, Bryan L. Jackson, Charles T. Rettner, B. N. Kurdi, Geoffrey W. Burr, Anthony Debunne, Diego G. Dupouy, Kumar Virwani
Rok vydání:	2010
Předmět:	Voltage polarity Materials science business.industry Pulse (signal processing) Polarity (physics) GeSbTe Materials design law.invention Phase-change memory chemistry.chemical_compound Crystallography chemistry law Optoelectronics Crystallization business Device failure
Zdroj:	2010 International Electron Devices Meeting.
DOI:	10.1109/iedm.2010.5703444
Popis:	We show that bias polarity can greatly accelerate device failure in GST- based (GeSbTe) PCM devices, and trace this effect to elemental segregation, initially driven by bias across the melt but then enhanced during the crystallization process. Implications include device, pulse, and materials design for high endurance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a16585c7af70c91730979cbd751b9e25 https://doi.org/10.1109/iedm.2010.5703444 Zobrazit plný text záznamu