Interface recombination in heterojunctions of amorphous and crystalline silicon

Autor:	K. Brendel, L. Elstner, Walther Fuhs, Manfred Schmidt, A. Froitzheim, K. Kliefoth
Rok vydání:	2002
Předmět:	business.industry Chemistry Heterojunction Condensed Matter Physics Electronic Optical and Magnetic Materials Amorphous solid Monocrystalline silicon Optics Materials Chemistry Ceramics and Composites Optoelectronics Wafer Crystalline silicon business Recombination Deposition (law) Common emitter
Zdroj:	Journal of Non-Crystalline Solids. :663-667
ISSN:	0022-3093
DOI:	10.1016/s0022-3093(01)01029-8
Popis:	Heterojunction solar cells consisting of an n-type a-Si:H(n) emitter and a p-type monocrystalline silicon wafer have been studied with particular emphasis on the role of interface recombination. It is shown that the form of the I – V characteristics and the effective interface recombination velocity depend on the treatment of the Si-wafer prior to the deposition of the amorphous emitter. Numerical simulation suggests that the non-exponential (S-shape) dependence of the I – V curves under illumination arises from a high density of interface states which results in enhanced recombination via interface states.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a15b75972815e9b5ad5cfc12efe7ba50 https://doi.org/10.1016/s0022-3093(01)01029-8 Zobrazit plný text záznamu Full Text from ScienceDirect