Exciton states and shallow acceptors in strained ZnTe
| Autor: | M. Steckermeier, Ulrich Rössler, H. Mayer |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Coupling
Condensed matter physics business.industry Chemistry Valence band structure General Chemical Engineering Exciton Binding energy General Physics and Astronomy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Stress (mechanics) Condensed Matter::Materials Science Semiconductor Coulomb business Electronic band structure |
| Zdroj: | Philosophical Magazine B. 70:335-345 |
| ISSN: | 1463-6417 1364-2812 |
| Popis: | The valence band structure of zincblende semiconductors is known to cause a fine-structure of Coulomb states due to hole spin-orbit coupling. This fine-structure is modified by uniaxial strain e.g. in hetero-epitaxial layers or under external stress. We extend the theoretical concepts developed by Baldereschi and Lipari by including the strain effects and calculate the binding energies of shallow acceptors and excitons in ZnTe. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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