Improving the sensitive and selective of trace amount ozone sensor on Indium-Gallium-Zinc Oxide thin film by ultraviolet irradiation
| Autor: | Jau-Han Chen, Chiu-Hsien Wu, Yu-Ning Li, Ren-Jang Wu, Chien-Chung Jeng, Kai-Wei Chang, Kuen-Lin Chen, Zu-Yin Deng |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Ozone Analytical chemistry Oxide 02 engineering and technology 010402 general chemistry medicine.disease_cause 01 natural sciences chemistry.chemical_compound Materials Chemistry medicine Nitrogen dioxide Irradiation Electrical and Electronic Engineering Thin film Instrumentation Indium gallium zinc oxide Metals and Alloys 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Light intensity chemistry 0210 nano-technology Ultraviolet |
| Zdroj: | Sensors and Actuators B: Chemical. 273:1713-1718 |
| ISSN: | 0925-4005 |
| Popis: | In this study, we successfully developed amorphous Indium-Gallium-Zinc Oxide (IGZO) thin film under ultraviolet irradiation that demonstrated high stability and high sensitivity in a high-selectivity ozone gas sensor at ppb-level concentrations. The experimental results show that the sensor can detect ozone levels ranging from 55 to 400 ppb with high stability and high repeatability. We also successfully detected concentrations of 10–16 ppb. Ozone changes of 2–5 ppb can be clearly distinguished. Using electron spectroscopy for chemical analysis, we identified the element ratio and ozone detection ability. Higher sensitivity is realized in the presence of oxygen deficiency in metal oxide semiconductors. By controlling ultraviolet intensity, we found the sensitivity of thin film to ozone and nitrogen dioxide to be inversely proportional to light intensity and light intensity can be used to improve gas selectivity. Strong intensity irradiated to sensor causes low sensitivity and high selectivity. |
| Databáze: | OpenAIRE |
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