Comparative study of epitaxial lateral overgrowth on semipolar (11-22) GaN by using stripe and hexagon SiO2 mask patterns
| Autor: | Ki-Ryong Song, Sang-Hyun Han, Hyunseok Na, Jae-Hwan Lee, Sung-Nam Lee |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science business.industry Hexagonal crystal system Exciton General Physics and Astronomy Lateral overgrowth 02 engineering and technology 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Crystal 0103 physical sciences Sapphire substrate Optoelectronics 0210 nano-technology business |
| Zdroj: | Journal of the Korean Physical Society. 72:254-259 |
| ISSN: | 1976-8524 0374-4884 |
| Popis: | We investigated defect reduction of epitaxial lateral overgrown (ELO) semipolar (11-22) GaN grown on m-plane sapphire substrate by using stripe and hexagon SiO2 patterns. We obtained the fully-coalescent semipolar ELO-GaN templates successfully regardless of pattern shape and size. However, ELO-GaN film grown on hexagonal patterns were more easily coalesced than ELO-GaN grown on stripe patterns during ELO process due to the lateral growths from six directions. Xray rocking curves from ELO-GaN films indicate that ELO-GaN had much better crystal quality than GaN template. However, the effect of the lateral overgrowth on hexagon patterns on crystal quality was limited because the large frictions from the six-directional growth on hexagon pattern resulted in crystallographic tilts. The photoluminescence emissions of donor-bound exciton (D0X) recombination were observed from both samples, but the D0X emission of stripe ELO-GaN film was considerably stronger than that of hexagon ELO-GaN. In addition, the defect-related emissions of stripe ELO-GaN were also weaker, indicating that stripe ELO-GaN has efficiently eliminated the non-radiative centers and suppressed the defects. |
| Databáze: | OpenAIRE |
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