| Autor: |
L. Ding, Chenming Hu, Y.T. Loh, E. D. Nowak |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
Proceedings. IEEE International SOI Conference. |
| Popis: |
As it becomes more difficult to increase MOSFET current drive through standard scaling techniques, other methods to improve performance are being pursued. One such technique is to use silicon-on-insulator (SOI) starting wafers. Performance enhancements using SOI have been demonstrated by a number of authors. Most of the reported work has used SIMOX material. Bonded SOI material is an alternative to SIMOX, which potentially has lower material defect density. The purpose of this work was to compare bonded SOI performance and yield to that of bulk CMOS. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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