| Autor: |
Eli Lusky, Boaz Eitan, G. Mitenberg, Yosi Shacham-Diamand, Assaf Shappir, Ilan Bloom |
| Rok vydání: |
2004 |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices. 51:444-451 |
| ISSN: |
0018-9383 |
| DOI: |
10.1109/ted.2003.823245 |
| Popis: |
A novel measurement method to extract the spatial distribution of channel hot electron injection is described. The method is based on characterization of localized trapped-charge in the nitride read-only memory (NROM) device. The charge distribution is determined by iteratively fitting simulated subthreshold and gate induced drain leakage (GIDL) currents to measurements. It is shown that the subthreshold and the GIDL measurements are sensitive to charge trapped over the n+ junction edge. Their characteristics are determined by the trapped charge width, density and location and the associated fringing field. Extremely high sensitivity of the GIDL measurement to localized charge over the n+ junction is demonstrated. The extracted charge distribution width is shown to be /spl sim/40 nm, located over the junction edge. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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