Quantitative Measurement of the Electron and Hole Mobility−Lifetime Products in Semiconductor Nanowires
| Autor: | John K. David, Lincoln J. Lauhon, J. L. Lensch, Yi Gu, John Romankiewicz |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Photocurrent
Electron mobility Materials science business.industry Mechanical Engineering Photoconductivity Nanowire Analytical chemistry Bioengineering General Chemistry Electron Condensed Matter Physics Electron transport chain Semiconductor Optoelectronics General Materials Science business Ohmic contact |
| Zdroj: | Nano Letters. 6:948-952 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/nl052576y |
| Popis: | The mobility−lifetime products (μτ) for electrons and holes in CdS nanowires were quantitatively determined by scanning photocurrent microscopy of devices with ohmic contacts. Ohmic contacts were fabricated by ion bombardment of the contact regions. By analyzing the spatial profiles of the local photoconductivity maps, we determined that electron transport (μeτe ≈ 5 × 10-7 cm2/V) was more efficient than hole transport (μhτh ≈ 10-7 cm2/V). The results demonstrate that photocurrent mapping can provide quantitative insight into intrinsic carrier transport properties of semiconductor nanostructures. |
| Databáze: | OpenAIRE |
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