Compared optical properties of ZnO heteroepitaxial, homoepitaxial 2D layers and nanowires
| Autor: | Andreas Waag, A. Ribeaud, M. Rosina, Andrey Bakin, Pierre Ferret, Stéphane Brochen, Abdelhamid El-Shaer, I. C. Robin, Guy Feuillet, J. Garcia, Pascal Marotel, Vladimir Petukhov, Matthieu Lafossas |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Photoluminescence business.industry Nanowire Mineralogy Cathodoluminescence Gallium nitride Substrate (electronics) Condensed Matter Physics Epitaxy Inorganic Chemistry chemistry.chemical_compound chemistry Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy business Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 311:2172-2175 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2008.10.078 |
| Popis: | The spectroscopic properties of ZnO epilayers grown by molecular beam epitaxy are investigated. Three samples are compared: a homoepitaxial layer grown on a Crystec substrate, a sample directly grown on c-sapphire and a layer grown on c-sappire using an MgO buffer. In the latter case, in spite of the high dislocation density, temperature-dependent photoluminescence measurements show only a small decrease of the luminescence intensity between 4 and 300 K, with an activation energy of 108 meV. Cathodoluminescence presents an inhomogeneous emission on the micrometric scale: a stronger emission is measured in small nanometric areas. A tentative explanation of this behavior is proposed. The optical properties of these three samples are also compared to those of two-dimensional homoepitaxial layers and ZnO nanowires grown on sapphire and p-type GaN by metal organic vapor-phase epitaxy. |
| Databáze: | OpenAIRE |
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